Preface Acknowledgements Useful Physical Constants Chapter 1 THE MEANING OF UNIVERSALITY 1.1 The last twelve years 1.2 Basic definitions 1.3 Empirical response functions 1.4 Calculation of total polarisation 1.5 The nature of universality 1.6 Negative capacitance 1.7 Recovery of field on open-circuit Basic equations: 1.8 Energy loss in the time domain 1.9 Concluding comments Appendix 1.1 Integration in Logarithmic Coordinates Appendix 1.2 Values of n and cot(nπ/2) References to chapter 1 Chapter 2 DIELECTTRIC RESPONSE OF SEMICONDUCTORS 2.1 Delayed electronic transitions 2.2 A simple barrier model 2.3 Response of Schottky diodes Adventitious barriers on semi-insulating material 2.5 Response of p-n junctions High-purity p-n junctions Junctions with deep levels Heavily doped Zener diodes Conclusions regarding space charge region responses 2.5 Junction diffusion capacitance a) Low-frequency response b) High-frequency response 2.6 Volume trapping-detrapping 2.7 Hopping conduction Electronic processes Semi-insulating GaAs Ionic Transport 2.8 Concluding comments References to Chapter 2 Chapter 3 LUMINESCENCE AND PHOTOCONDUCTIVITY 3.1 The relevance of the subject 3.2 Idealised light emission rates 3.3 Analytical formulation The limit of rapid trapping 3.4 Review of luminescence data Exponential decays Simple power law decays More complex behaviours 3.5 Conclusions from luminescence 3.6 Photoconductivity in the F-D Principles of photoconductive behaviour Analytical formulation 3.7 Conclusions References to Chapter 3 Chapter 4 "FLAS" DIELECTRIC RESPONSE Chapter 5 LOW-FREQUENCY DISPERSION Chapter 6 DC AND AC CONDUCTIVITY Chapter 7 CHEMICAL REACTION DINETICS Chapter 8 THERMALLY STIMULATED DEPOLARISATION Chapter 9 MECHANICAL rELAXATION Chapter 10 MEASUREMENT AND PRESENTATION OF DATA Chapter 11 THEORETICAL INTERPRETATIONS Chapter 12 THE ENERGY CRITERION Author Index Subject Index
