半导体器件原理与技术(Semiconductor Device Principle and Technology)

This book comprehensively and deeply introduces the semiconductor device principle and technology. The book consists of three sections: semiconductor physics and devices, semiconductor manufacturing process and semiconductor packaging，testing and simulating. The first section mainly introduces semiconductor physics foundation, diode, bipolar junction transistor, MOS field effect transistor, power MOSFET, thyristor, IGBT, passive device and SPICE model. The second section mainly introduces semiconductor process technology, semiconductor process simulation and film preparation technology. The third section mainly introduces semiconductor packaging, testing and simulating technology. These contents will lay a solid foundation for further mastering the basic theories and methods of analysis, design, manufacturing, packaging and testing of semiconductor devices. This book can be used as a textbook for undergraduate and graduate students who are engaged in the analysis, design, manufacturing, packaging and testing of semiconductor devices and IC design. It can also be used as a selfstudy and reference book for professional engineers.

SECTION Ⅰ Semiconductor Physics and Devices Chapter 1 Semiconductor physics foundation 1.1 Semiconductor materials 1.2 Semiconductor structure 1.3 Semiconductor defects 1.4 Energy band of semiconductor 1.5 Fermi level 1.6 Carrier concentration of semiconductor 1.7 Carrier motion of semiconductor 1.7.1 Carrier drift 1.7.2 Carrier diffusion 1.7.3 Carrier recombination Exercises References Chapter 2 Diode 2.1 Basic structure of diode 2.2 Formation of pn junction and impurity distribution 2.3 Equilibrium pn junction 2.3.1 Formation of space charge region 2.3.2 Energy band of pn junction 2.3.3 Contact potential difference 2.3.4 Space charge region characteristics 2.3.5 Electric field and width of space charge region 2.4 Bias characteristics of diodes 2.4.1 Forward bias 2.4.2 Reverse bias 2.5 Influencing factors of diode DC characteristics 2.5.1 Recombination current and generation current in space charge region 2.5.2 Surface effect 2.5.3 Series resistance effect 2.5.4 Large injection effect 2.5.5 Temperature effect 2.6 Breakdown characteristics of diode 2.6.1 Avalanche breakdown 2.6.2 Tunnel breakdown 2.6.3 Thermoelectric breakdown 2.7 Switching characteristics of diode Exercises References Chapter 3 Bipolar junction transistor 3.1 Introduction of BJT 3.2 Basic architecture of bipolar transistor 3.2.1 Alloy transistor 3.2.2 Alloy diffusion transistor 3.2.3 Planar transistor 3.2.4 Mesa transistor 3.3 Amplification of bipolar junction transistor 3.3.1 Carrier transmisson characteristics 3.3.2 Current amplification coefficient 3.3.3 Amplification conditions